The simplest biasing applies a base-bias resistor between the base and a base battery VBB. It is convenient to use the existing VCC supply instead of a new bias supply. An example of an audio amplifier stage using base-biasing is “Crystal radio with one transistor. ” crystal radio, Ch 9. Seperti yang kalian ketahui sebelumnya, bahwa kalkulator membutuhkan Integrated Circuit agar bisa berfungsi. Sirkuit ini menggunakan transistor untuk menambah dan mengurangi, serta melakukan perhitungan pada logaritma untuk perkalian, pembagian, dan operasi yang lebih rumit seperti menggunakan eksponen dan menemukan akar kuadrat. Pada dasarnya, semakin banyak transistor.

Type Designator: P13009

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage Vcb : 700 V

Maximum Collector-Emitter Voltage Vce : 400 V

Maximum Emitter-Base Voltage Veb : 9 V

Maximum Collector Current Ic max : 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

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Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3PB

P13009 Transistor Equivalent Substitute - Cross-Reference Search

P13009 Datasheet (PDF)

1.1. sbp13009s.pdf Size:417K _update

SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para

1.2. sbp13009o.pdf Size:334K _update

SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C Women cracking whips.

1.3. sbp13009k.pdf Size:316K _update

SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter

1.4. fjp13009.pdf Size:181K _upd

March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter

1.5. wbp13009-k.pdf Size:328K _upd

WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par

1.6. fjp13009.pdf Size:123K _fairchild_semi

March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 40

1.7. p13009.pdf Size:115K _jdsemi

R P13009 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1． 1． 1．APPLICATION 1． Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2． 2． 2．FEA

1.8. p13009a.pdf Size:113K _jdsemi

R P13009A 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1． 1． 1．APPLICATION 1． Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2． 2． 2．FE

Datasheet: CJD204R, CJD3439, CJD81, CJD86, CJE13007, CJF100, CJF101, CJF102, TIP31C, CJF106, CJF107, CMBTA42, CMBTA44, CMBTA92, CN1016, CP1016, CP756.

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